| PART |
Description |
Maker |
| SI2300 |
VDS=20V,RDS(ON)=40m VGS=4.5V,ID=5.0A VDS=20V,RDS(ON)=60m
|
TY Semiconductor Co., Ltd
|
| KO8822 |
VDS (V) = 20V Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -12 V
|
TY Semiconductor Co., L...
|
| KX020N06 |
VDS (V) = 60V ID = 2 A (VGS = 10V) RDS(ON) 200m (VGS = 10V)
|
TY Semiconductor Co., L...
|
| 75N08 |
VDS=75V,RDS(on)=0.009 VGS=10V,ID=30A VDS=75V,RDS(on)=0.011VGS=4.5V,ID=20A
|
TY Semiconductor Co., Ltd
|
| 24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR |
MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护
MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No
MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes
(ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
16/8/4/2/1KbitSerialICBusEEPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| SI4825DY |
P-Channel 30-V (D-S) MOSFET
P-Channel 30-V (D-S) MOSFET VDS = -30V; VGS = ± 25V
|
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| KXU05N25 |
VDS (V) = 250V RDS(ON) 1 (VGS = 10V) Drain-Source Voltage VDSS 250 V
|
TY Semiconductor Co., Ltd
|
| IRF7831PBF IRF7831TRPBF IRF7831PBF-15 |
Ultra-Low Gate Impedance
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mΩ@VGS = 10V , Qg(typ.) = 40nC )
HEXFET Power MOSFET ( VDSS = 30V , RDS(on)max = 3.6mヘ@VGS = 10V , Qg(typ.) = 40nC )
High Frequency Point-of-Load Synchronous Buck Converter
|
International Rectifier
|
| SI2315BDS |
-12 0.050 @ VGS = -4.5 V 0.065 @ VGS = -2.5 V 0.100 @ VGS = -1.8 V
|
TY Semiconductor Co., Ltd
|
| KI1400DL |
Drain-source voltage VDS 20 V Gate-source voltage VGS -12 V
|
TY Semiconductor Co., L...
|
| NDH854P |
Length/Height 1.02 mm Width 4.55 mm Depth 4.06 mm Power dissipation 1.8 W Transistor polarity P Channel Current Id cont. 5.1 A Voltage Vgs th max. 4.5 V Voltage Vds max 30 V
P-Channel Enhancement Mode Field Effect Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
